Mitsubishi Electric successfully developed 6.5kV full SiC power module to achieve the world's highest power density rated output power

Mitsubishi Electric has made a significant breakthrough by successfully developing a 6.5kV full silicon carbide (SiC) power module. This innovation marks a major step forward in the development of high-voltage, energy-efficient power electronics. Since 2013, the company has already introduced 3.3kV full SiC modules for rail vehicles, demonstrating its early commitment to advancing SiC technology and replacing traditional silicon-based power modules. On January 31, Mitsubishi Electric announced the successful creation of a 6.5kV full SiC power module, which features a single-chip design and an advanced packaging solution. This module achieves the world’s highest power density within the voltage range of 1.7kV to 6.5kV, calculated based on the rated voltage and current of the semiconductor components. The company aims to use this module to help reduce the size and power consumption of power electronic systems used in rail transit and other high-voltage applications. The new 6.5kV full SiC power module offers several key advantages. It matches the maximum voltage capability of conventional silicon IGBT modules while significantly improving efficiency and power density. By using SiC technology, the module can operate at higher switching frequencies, allowing for smaller and more efficient high-voltage converters. One of the standout features is its single-chip structure combined with a new package that provides excellent heat dissipation and thermal resistance. This design integrates SiC-MOSFETs and diodes onto a single chip, reducing the overall chip area. Additionally, the module uses a high-conductivity insulation substrate and advanced bonding technology to ensure reliability and performance under high-temperature conditions. The 6.5kV full SiC module is available in an industry-standard package (Mitsubishi Electric HV100), making it compatible with existing HV100 series Si IGBT modules. This compatibility ensures a smooth transition for users looking to upgrade their systems with more efficient SiC technology. Compared to previous models, the new module delivers improved performance and efficiency, as shown in the provided comparison chart. The development was supported by Japan's New Energy and Industrial Technology Development Organization (NEDO), and the project has resulted in 9 domestic patents and 3 international patents, highlighting its technological significance. This advancement underscores Mitsubishi Electric’s ongoing efforts to lead the way in next-generation power electronics, paving the way for more sustainable and efficient energy solutions across various industries.

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