Mitsubishi Electric has made a significant breakthrough by successfully developing a 6.5kV full silicon carbide (SiC) power module. This achievement marks a major step forward in the advancement of high-voltage power electronics, particularly for applications such as rail transit and high-voltage power systems.
Since 2013, Mitsubishi Electric has been at the forefront of SiC technology, commercializing 3.3kV full SiC power modules for use in rail vehicles. Over the years, the company has continuously worked on improving energy efficiency and reducing the size of power modules, aiming to replace traditional silicon-based IGBTs with more advanced SiC solutions.
On January 31, Mitsubishi Electric announced the successful development of a 6.5kV full SiC power module, which features a single-chip design and an innovative package. This new module sets a world record for power density across the voltage range from 1.7kV to 6.5kV, making it one of the most efficient and compact power modules available today. The improved power density is calculated based on the rated voltage and current of the semiconductor components.
The company expects this module to play a key role in the miniaturization and energy-saving of power electronic equipment, especially in high-voltage environments. It can significantly reduce the size and weight of converters while improving switching performance and efficiency.
Key features of the 6.5kV full SiC power module include:
- It offers the same maximum voltage rating of 6.5kV as traditional Si IGBT modules, ensuring compatibility with existing systems.
- Full SiC technology boosts both power density and efficiency, allowing for higher switching frequencies and smaller converter designs.
- The module uses a single-chip structure, integrating SiC-MOSFETs and diodes into one chip, which reduces the overall chip area.
- A new packaging solution with high thermal conductivity and heat resistance ensures better heat dissipation and reliability.
- It achieves the world's highest power density of 9.3kVA/cm³ among high-voltage power modules in the 1.7kV–6.5kV range.
The new all-SiC power module is available in an industry-standard HV100 package, making it compatible with existing HV100 series Si IGBT modules. This compatibility allows for easier integration into current systems without requiring major redesigns.
In comparison to previous models, the 6.5kV SiC module demonstrates remarkable improvements in performance, efficiency, and compactness. It represents a major leap in power electronics technology, offering a sustainable and future-ready solution for high-voltage applications.
This innovation was developed under the Japan Research and Development Corporation's New Energy and Industrial Technology Development Organization (NEDO). So far, the project has secured 9 domestic patents and 3 international patents, highlighting its technological significance and potential impact on the global market.
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