High-brightness LED output value sees 12.6 billion US dollars sapphire crystal growth capacity annual growth rate of nearly 100%

According to DIGITIMES, the global high-brightness LED market reached US$8.25 billion in 2010. It is expected that the output value will grow to US$12.6 billion in 2011, and the annual growth rate is estimated to be 53%. It is estimated that the global high-brightness LED output value in 2012 and 2013 will reach US$16.8 billion and US$21.9 billion, respectively, and the annual growth rate will still reach 30% or more.

According to the total number of high-brightness LEDs, the compound growth rate will be 28.6% in 2009-2013. Among them, the LED lighting application will use a multi-year compound growth rate of 97.4%, which not only exceeds the overall LED industry growth rate, but also More than 62.6% of the annual compound growth rate of LED backlights for LCD displays. The use of high-brightness LEDs has increased, which has also driven the growth of demand for MOCVD machines. In 2010, driven by the mainland subsidy policy, orders for the lower half of the mainland in 2010 exceeded those of South Korea and Taiwan, due to the estimated installation of MOCVD machines in the mainland. The peak will fall in 2011, so the proportion of major regions in Asia (Mainland, South Korea, Taiwan) has grown to 60%. In contrast, the demand for MOCVD machines from Korean manufacturers in 2011 will be reduced by about half compared with 2010. The share of the Asian region fell to 15%.

Another noteworthy LED upstream material, the sapphire substrate, had a gap of up to 40% in 2010, mainly due to the conservative attitude of the first half of the sapphire crystal growth plant Rubicon and Monocrystal in 2010. However, in the face of the LED Chip industry's high demand for sapphire substrates, Rubicon, Monocrystal, STC and other major sapphire companies have significantly expanded their production plans in 2011. Among them, South Korean manufacturer STC will be ahead of the original No. 1 factory Rubicon in 2011 with the subsidy of the Korean government. In 2011, the global sapphire ingot production capacity will increase by nearly 1 time compared with 2010.

The triode, the full name should be a semiconductor triode, also known as a bipolar transistor, a crystal triode, is a semiconductor device that controls current. Its function is to amplify the weak signal into an electrical signal with a large amplitude value, and also as a non-contact switch.
Transistor is one of the basic components of semiconductors, with current amplification, is the core component of electronic circuits. The triode is made up of two closely spaced PN junctions on a semiconductor substrate. The two PN junctions divide the monolithic semiconductor into three parts, the middle part is the base area, and the two sides are the emitter area and the collector area, and the arrangement is PNP. And NPN two.

Small Signal Transistor

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