Electronic enthusiasts eight o'clock: Technology advancement not only promotes the development and progress of technology and industry, but also makes the development of LED industry show stage characteristics, and has the characteristics of the times. 2016, CSP, UV LED, quantum dot LED, graphene, silicon substrate... are all hot keywords in the development of LED industry technology in the past year. What laboratory technology research results will have a major impact on the LED industry in the future. Xiao Bian chose the analysis of the research results of five leading technologies in the emerging industry think tank to share with you.
Pyramidal quantum dot LED or push quantum computing development
Researchers at the Tyndall National Institute in Ireland have designed pyramid-shaped quantum dot light-emitting diodes (LEDs) using scalable and compatible foundry-based lithography techniques, which are expected to produce entangled photons associated with states for quantum operations. . The project leader said that this research will likely be used in quantum computing research in the future to accelerate the application of quantum technology. The Tyndall Institute used nanotechnology to power up pyramid-shaped quantum dot arrays to produce entangled photons. Utilizing the inherent nano-characteristics of the tapered structure, especially for designed, self-assembled vertical quantum wires, it is possible to selectively inject current into the quantum dots.
According to reports, this is an important step in the realization of quantum photonic integrated circuit design, laying the foundation for thousands or even more synchronous quantum information processing tasks. By etching back the original substrate, the researchers restored it to the top-up pyramid structure, which increased the order of light by several orders of magnitude compared to the built-in embedded components. The top and bottom contacts are then designed to selectively inject current into a single QD in the center of the pyramid structure. The key is to utilize self-calibration techniques to make the assembly easy to implement on a large scale. By contacting all of the μLEDs, the researchers were able to perform a large number of analyses for approximately 1,300 μL LEDs, but it is also planned to control the μLEDs separately for better performance selectivity and to compensate for process inhomogeneities. Ideally, for quantum information processing, researchers hope to use μLED as a completely indistinguishable source of entangled photons. Photon extraction efficiency is also quite low, about 1%, so researchers expect to improve by using different techniques (such as the stress and electric field of built-in materials). Tinder's researchers have developed a scheme for quantum dot light-emitting diodes capable of producing entangled photons, which can theoretically be used for information coding in quantum computing.
Taiwan University's research and development of LED lamps can reduce the use of light bulbs by half
Associate Professor Li Hongbin and Department of Materials Science and Engineering, University of Taiwan, China, cooperated with Shengwei Optoelectronics Co., Ltd. to develop new LED lamps, which not only have low glare and heat dissipation, but also use half of the bulbs. The related technology has been subsidized by the Ministry of Science and Technology and passed the patent application. Associate Professor Li Hongbin pointed out that they use the design of tilt and reflection to make LED light reflected into the fog light source through the aluminum plate. The brightness is the same as the traditional, but the light is softer, which improves the problem of glare and glare. The LED arrangement of this new type of lamp is not as tight as in the past, which can reduce the use of one-half of the light bulb. It is not only more environmentally friendly, but also increases the distance between the bulbs, which makes the heat-conducting area larger, and the heat dissipation effect is better, which can reduce the LED loss caused by high temperature. To extend the life of the lamp. Researchers say that poor heat dissipation can increase the temperature of the lamp, causing the LED die efficiency to drop and the phosphor to deteriorate early. The new LED developed by the laboratory improves the LED heat dissipation problem through the application of nano array anodized aluminum technology. According to reports, during the optical test, it was found that the aluminum substrate used for the susceptor was directional, and the LED light source was therefore uneven. It was tried for three or four months before and after, and it was successfully improved by heat treatment. See the listing of research and development results.
Super materials surfaced or the future of semiconductors
A new type of semiconductor material that can be applied to future supercomputing devices emerges. This type of semiconductor is called indium selenide (InSe), which is only a few atoms thick and is very close to graphene. In the past decade, the world has invested heavily in the study of graphene and two-dimensional materials. These efforts have not been in vain. Recently, a new type of semiconductor material that can be applied to future supercomputers has surfaced. This type of semiconductor is called indium selenide (InSe), which is only a few atoms thick and is very close to graphene. Graphene is only as thick as a layer of atoms and has unparalleled conductivity. Experts all over the world are thinking about the application of graphene in future circuits. Despite so many extraordinary properties, graphene has no energy gap. Unlike ordinary semiconductors, its chemical performance is more like metal. This makes it a bleak prospect in applications similar to transistors.
This new discovery proves that indium selenide crystals can be made as thin as a few atoms. It has shown a much better electronic property than silicon. Silicon is a commonly used material for today's electronic components, especially chips. More importantly, unlike graphene, the energy gap of indium selenide is quite large. This allows the transistor it made to be easily turned on/off. This is very similar to silicon, making indium selenide an ideal replacement for silicon. People can use it to make the next generation of ultra-high-speed electronic devices. At the moment, scientists like to combine graphene with other excellent materials. Make the extraordinary properties of graphene complementary to the characteristics of other materials. This often produces exciting scientific discoveries and is applied to practical problems in ways we can't imagine. “The ultra-thin indium selenide is an ideal material between silicon and graphene. Like graphene, indium selenide has a natural ultra-thin morphology, making it truly nanoscale,†said Sir Andre Geim, father of graphene. The process is possible. Like silicon, indium selenide is an excellent semiconductor."
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